Specification Comparison
Vishay Siliconix
Document Number 74071
www.vishay.com
11-May-05
TP0101K vs. TP0101T
Description:
P-Channel,20-V (D-S) MOSFET, Low Threshold
Package:
SOT-23
Pin Out:
Identical
Part Number Replacements:
TP0101K-T1-E3 Replaces TP0101T-T1-E3
TP0101K-T1-E3 Replaces TP0101T-T1
Summary of Performance:
The TP0101K is a technology upgrade with ESD protection to the original TP0101T. The ESD protection diodes on the gate
increases Gate-Body Leakage; otherwise, there is little variation regarding performance.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter Symbol
TP0101K
TP0101T
Unit
Drain-Source Voltage
V
DS
-20 -20
Gate-Source Voltage
V
GS
+8 +8
V
T
A
= 25
C
-0.58 -0.6
Continuous Drain Current
T
A
= 70
C
I
D
-0.46 -0.48
Pulsed Drain Current
I
DM
-2 -3
Continuous Source Current
(MOSFET Diode Conduction)
I
S
-0.3 -0.6
A
T
A
= 25
C
0.35 0.35
Power Dissipation
T
A
= 70
C
P
D
0.22 0.22
W
Operating Junction & Storage Temperature Range
T
j
& T
stg
-55 to 150
-55 to 150
C
Maximum Junction-to-Ambient
R
thJA
357 357
C/W
SPECIFICATIONS (T
J
= 25
O
C UNLESS OTHERWISE NOTED)
TP0101K TP0101T
Parameter Symbol
Min Typ Max Min
Typ
Max
Unit
Static
Gate-Threshold Voltage
V
GS(th)
-0.5 -0.7 -1.0 -0.5 -0.9 -1.5 V
Gate-Body Leakage
I
GSS
+5000 +100 nA
Zero Gate Voltage Drain Current
I
DSS
-1
-1
A
V
GS
= -4.5 V
-1.2
-2.5
On-State Drain Current
V
GS
= -2.5 V
I
D(on)
-0.5
-0.5
A
V
GS
= -4.5 V
0.42 0.65
0.45
0.65
Drain-Source On-Resistance
V
GS
= -2.5 V
r
DS(on)
0.64 0.85
0.69
0.85
Forward Transconductance
g
fs
1300
1300 S
Diode Forward Voltage
V
SD
-0.9 -1.2
-0.9
-1.2
V
Dynamic
Total
Gate
Charge
Qg
1400
2200
2020
3000
Gate-Source Charge
Qgs
300
180
Gate-Drain
Charge
Qgd
250
720
nC
Gate
Resistance
Rg
150
NS
Switching
a
t
d(on)
25 35 7
12
Turn-On Time
t
r
30 45
25
35
t
d(off)
55 85
19
30
Turn-Off Time
t
f
38 60 9
15
ns
NS denotes not specified in original datasheet
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